Hydrodynamic Modeling Of The Hot Electron Effect In Subuderon MOSFET's Using A Simplified Energy Bal - VLSI Process and Device Modeling, 1993. (1993 VPAD). 1993 International Workshop on

This paper describes a newlydeveloped approach for simulating the hot electron effect of submicron LDD n-MOS devices. The conventional drift-diffusion (DD) method tends to overestimate the impact ionization rate by comparing with experimental data. In particular, divergency is frequently incurred while calculating the continuity equations inclusive of impact ionization terms. To cope with this difficulty. a new simplified Hydrodynamic (HD) model, incorporating an analytical energy balance equation solutions, will be proposed. In the present method, a simple and efficient approach to obtain the effective electric field distribution is used so that accurate impact ionization rate can be determined. With the calculated impact ionization rate, substrate current can be accurately predicted. Excellent agreement has been achieved for a wide range of bias conditions and channel lengths.